BC807 datasheet(1/2 Pages) SECOS

No. de pieza	BC807

Descripción Electrónicos	PNP Plastic Encapsulate Transistor

PDF	2 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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Elektronische Bauelemente

BC807-16, -25, -40

-500 mA, -50 V

PNP Plastic Encapsulate Transistor

01-June-2002 Rev. B

Page 1 of 2

Collector

Base

Emitter

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen-free & RoHS compliant

FEATURES

Ideally suited for automatic insertion

Epitaxial planar die construction

Complementary to BC817 (NPN Type)

MARKING

BC807-16:5A;

BC807-25:5B;

BC807-40:5C

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

-50

V

Collector to Emitter Voltage

VCEO

-45

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Collector Power Dissipation

PC

300

mW

Junction, Storage Temperature

TJ, TSTG

+150, -55 ~ +150

℃

CHARACTERISTICS at Ta = 25°C

Symbol

Min.

Max.

Unit

Test Conditions

BVCBO

-50

-

V

IC = -10 uA, IE = 0

BVCEO

-45

-

V

IC = -10 mA, IB = 0

BVEBO

-5

-

V

IE = -1 uA, IC = 0

ICBO

-

-0.1

uA

VCB = -45V, IE = 0

ICEO

-

-0.2

uA

VCE = -40V, IB = 0

IEBO

-

-0.1

uA

VEB = -4V, IC = 0

VCE(sat)

-

-0.7

V

IC = -500mA, IB = -50 mA

VBE(sat)

-

-1.2

V

IC = -500mA, IB = -50 mA

hFE(1)

807-16

807-25

807-40

100

160

250

400

600

VCE = -1 V, IC = -100 mA

fT

100

-

MHz

VCE = -5 V, IC = -10 mA, f = 100MHz

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