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GP200MHS18 Datasheet(PDF) 4 Page - Dynex Semiconductor

No. de pieza GP200MHS18
Descripción Electrónicos  Half Bridge IGBT Module
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP200MHS18 Datasheet(HTML) 4 Page - Dynex Semiconductor

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GP200MHS18
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
650
300
120
600
120
80
80
Typ.
500
200
50
450
90
60
50
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2400A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
800
400
150
700
130
120
110
Typ.
600
300
100
540
100
100
80
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr



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