Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

TF707 Datasheet(PDF) 3 Page - Dynex Semiconductor

No. de pieza TF707
Descripción Electrónicos  Fast Switching Thyristor
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

TF707 Datasheet(HTML) 3 Page - Dynex Semiconductor

  TF707 Datasheet HTML 1Page - Dynex Semiconductor TF707 Datasheet HTML 2Page - Dynex Semiconductor TF707 Datasheet HTML 3Page - Dynex Semiconductor TF707 Datasheet HTML 4Page - Dynex Semiconductor TF707 Datasheet HTML 5Page - Dynex Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 3 / 5 page
background image
TF707..L
3/5
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1000A peak, T
case = 125
oC
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
Gate source 20V, 20
Ω
t
r ≤ 0.5µs, Tj = 125˚C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM Tj = 125
oC, Gate open circuit
Min.
Max.
Units
-
2.8
V
-80
mA
-
300
V/
µs
Repetitive 50Hz
-
500
A/
µs
Non-repetitive
-
800
A/
µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
1.8
-V
-
1.0
m
Ω
Delay time
t
gd
--*
µs
Total turn-on time
t
(ON)TOT
--*
µs
T
j = 25˚C, IT = 50A,
V
D = 300V, IG = 1A,
dI/dt = 50A/
µs, dI
G/dt = 1A/µs
*Typical value.
I
H
Holding current
T
j = 25
oC, I
TM = 1A, VD = 12V
100*
-
mA
T
j = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/
µs (Linear to 60% V
DRM),
dI
R/dt = 50A/µs, Gate open circuit
Turn-off time
t
q
100
-
µs
t
q
code: L
GATE TRIGGER CHARACTERISTICS AND RATINGS
I
L
Latching current
T
j = 25
oC, I
G = 0.5A, VD = 12V
300*
-
mA
Reverse recovery charge
Q
RR
500
-
µC
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.25
Typ.
mA
V
V
GD
Gate trigger voltage
300
V
GT
I
GT
Gate trigger current
At V
DRM Tcase = 125
oC, R
L = 1kΩ,
V
DRM = 12V,
R
L = 6Ω, Tcase = 25
oC
V
DRM = 12V, RL = 6Ω, Tcase = 25
oC
-
-
-
V
30
0.25
V
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
-
-
10
I
FGM
Peak forward gate current
Peak forward gate voltage
V
FGM
V
FGN
Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
-
-
50
3.0
W
W



Html Pages

1 2 3 4 5


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com