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MAS3690FD Datasheet(PDF) 40 Page - Dynex Semiconductor

No. de pieza MAS3690FD
Descripción Electrónicos  1553B Bus Controller/Remote Terminal
PDF  41 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MAS3690FD Datasheet(HTML) 40 Page - Dynex Semiconductor

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RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with Mil-Std-883 test method 1019, Ionizing
Radiation (Total Dose).
Total Dose (Function to specification)*
3x10
5 Rad(Si)
Transient Upset (Stored data loss)
5x10
10 Rad(Si)/sec
Transient Upset (Survivability)
>1x10
12 Rad(Si)/sec
Neutron Hardness (Function to specification)
>1x10
15 n/cm2
Single Event Upset**
<1x10
-10 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 44: Radiation Hardness Parameters
ORDERING INFORMATION
Unique Circuit Designator
S
R
Q
H
Radiation Hard Processing
100 kRads (Si) Guaranteed
300 kRads (Si) Guaranteed
1000 kRads (Si) Guaranteed
Radiation Tolerance
C
F
N
Ceramic DIL (Solder Seal)
Flatpack (Solder Seal)
Naked Die
Package Type
QA/QCI Process
(See Section 9 Part 4)
Test Process
(See Section 9 Part 3)
Assembly Process
(See Section 9 Part 2)
L
C
D
E
B
S
Rel 0
Rel 1
Rel 2
Rel 3/4/5/STACK
Class B
Class S
Reliability Level
MAx3690xxxxx
MAx3691xxxxx
MAx3693Cxxxx
For details of reliability, QA/QC, test and assembly
options, see ‘Manufacturing Capability and Quality
Assurance Standards’ Section 9.



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