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EL2002C Datasheet(PDF) 3 Page - Elantec Semiconductor |
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EL2002C Datasheet(HTML) 3 Page - Elantec Semiconductor |
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3 / 12 page ![]() EL2002C Low Power 180 MHz Buffer Amplifier Electrical Characteristics V S e g 15V RS e 50X unless otherwise specified Contd Parameter Description Test Conditions Limits EL2002AC Units EL2002C VIN Load Temp Min Typ Max Test Level AV3 Voltage Gain g 3V 100 X 25 C 083 091 I VV with VS e g5V TMIN TMAX 080 III VV VO Output Voltage Swing g 12V 100 X 25 C g 10 g 11 I V TMIN TMAX g 95 III V ROUT Output Resistance g 2V 100 X 25 C 8 13 I X TMIN TMAX 15 III X IOUT Output Current g 12V (Note 4) 25 C a 100 a 160 I mA TMIN TMAX g 95 III mA IS Supply Current 0 % 25 C 5 75 II mA TMIN TMAX 10 III mA PSRR Supply Rejection 0 % 25 C60 75 I dB (Note 5) TMIN TMAX 50 III dB tr Rise Time 05V 100 X 25 C 28 V ns td Propagation Delay 05V 100 X 25 C 15 V ns SR Slew Rate (Note 6) g 10V 100 X 25 C 1200 2000 IV V ms Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g75V then the input current must be limited to g50 mA See the applications section for more information Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic curves for more details Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited Note 4 Force the input to a12V and the output to a10V and measure the output current Repeat with b12 VIN and b10V on the output Note 5 VOS is measured at VSaea45V VSbeb45V and VSaea18V VSbe 18V Both supplies are changed simultaneously Note 6 Slew rate is measured between VOUT ea5V and b5V 3 |
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