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EL2002C Datasheet(PDF) 3 Page - Elantec Semiconductor

No. de pieza EL2002C
Descripción Electrónicos  Low Power, 180 MHz Buffer Amplifier
PDF  12 Pages
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Fabricante Electrónico  ELANTEC [Elantec Semiconductor]
Página de inicio  http://www.elantec.com
Logo ELANTEC - Elantec Semiconductor

EL2002C Datasheet(HTML) 3 Page - Elantec Semiconductor

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EL2002C
Low Power 180 MHz Buffer Amplifier
Electrical Characteristics V
S
e g
15V RS e 50X unless otherwise specified
Contd
Parameter
Description
Test Conditions
Limits
EL2002AC
Units
EL2002C
VIN
Load
Temp
Min
Typ
Max
Test
Level
AV3
Voltage Gain
g
3V
100
X
25 C
083
091
I
VV
with VS e g5V
TMIN TMAX
080
III
VV
VO
Output Voltage Swing
g
12V
100
X
25 C
g
10
g
11
I
V
TMIN TMAX
g
95
III
V
ROUT
Output Resistance
g
2V
100
X
25 C
8
13
I
X
TMIN TMAX
15
III
X
IOUT
Output Current
g
12V
(Note 4)
25 C
a
100
a
160
I
mA
TMIN TMAX
g
95
III
mA
IS
Supply Current
0
%
25 C
5
75
II
mA
TMIN TMAX
10
III
mA
PSRR
Supply Rejection
0
%
25 C60
75
I
dB
(Note 5)
TMIN TMAX
50
III
dB
tr
Rise Time
05V
100
X
25 C
28
V
ns
td
Propagation Delay
05V
100
X
25 C
15
V
ns
SR
Slew Rate (Note 6)
g
10V
100
X
25 C
1200
2000
IV
V
ms
Note 1 If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds g75V then the input
current must be limited to g50 mA See the applications section for more information
Note 2 The maximum power dissipation depends on package type ambient temperature and heat sinking See the characteristic
curves for more details
Note 3 A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited
Note 4 Force the input to a12V and the output to a10V and measure the output current Repeat with b12 VIN and b10V on the
output
Note 5 VOS is measured at VSaea45V VSbeb45V and VSaea18V VSbe 18V Both supplies are changed
simultaneously
Note 6 Slew rate is measured between VOUT ea5V and b5V
3



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