AP2181/ AP2191

Document number: DS31563 Rev. 7 - 2

4 of 17

www.diodes.com

March 2013

© Diodes Incorporated

AP2181/ AP2191

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input UVLO

1.6

1.9

2.5

V

Input Shutdown Current

0.5

1

A

Input Quiescent Current

45

70

µA

Input Leakage Current

Disabled, OUT grounded

1

µA

Reverse Leakage Current

1

µA

SOT25, MSOP-8EP, SO-8

95

115

m

Ω

U-DFN2018-6

90

110

-40

140

120

140

-40

170

Short-Circuit Current Limit

2.0

A

Over-Load Current Limit

1.6

2.1

2.6

A

Current Limiting Trigger Threshold

2.6

A

EN Input Logic Low Voltage

0.8

V

EN Input Logic High Voltage

2

V

EN Input Leakage

1

µA

Output Turn-On delay time

0.05

ms

Output Turn-On rise time

0.6

1.5

ms

Output Turn-Off delay time

0.01

ms

Output Turn-Off fall time

0.05

0.1

ms

FLG Output FET On-Resistance

20

40

Ω

FLG Blanking Time

4

7

15

ms

Thermal Shutdown Threshold

140

C

Thermal Shutdown Hysteresis

25

C

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 5)

110

C/W

MSOP-8EP (Note 6)

60

C/W

SOT25 (Note 7)

157

C/W

U-DFN2018-6 (Note 8)

70

C/W

Notes:

5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.

6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and

thermal vias to bottom layer ground plane.

7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.

8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom

layer 1.0”x1.4” ground plane.