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CSC3420 Datasheet(PDF) 1 Page - Continental Device India Limited

No. de pieza CSC3420
Descripción Electrónicos  NPN EPITAXIAL SILICON POWER TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CSC3420 Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC3420
TO-126
Plastic Package
Strobe Flash and Medium Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNIT
Collector Base Voltage
VCBO
V
Collector Emitter Voltage
VCES
V
Collector Emitter Voltage
VCEO
V
Emitter Base Voltage
VEBO
V
Collector Current (DC)
IC
A
Collector Current (Pulse)
*ICP
A
Base Current
IB
A
Collector Power Dissipation Ta=25ºC
PC
W
Collector Power Dissipation Tc=25ºC
PC
W
Junction Temperature
Tj
ºC
Storage Temperature Range
Tstg
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut Off Current
ICBO
VCB=40V, IE=0
100
nA
Emitter Cut Off Current
IEBO
VEB=8V, IC=0
100
nA
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
20
V
DC Current Gain
hFE
*VCE=2V, IC=0.5A
140
600
VCE=2V, IC=4A
70
Collector Emitter Saturation Voltage
VCE (sat)
IC=4A, IB=0.1A
1.0
V
Base Emitter On Voltage
VBE (on)
VCE=2V, IC=4A
1.5
V
Transition Frequency
fT
VCE=2V, IC=0.5A
100
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
40
pF
*hFE Classification
CSC3420Rev150606E
*Pulse Width : Pulse Width=10ms, Duty Cycle=30%
Value
50
20
8.0
- 55 to +150
Y : 140 - 240 ,
GR : 200 - 400 :
BL : 300 - 600
40
150
10
5.0
8.0
1.0
1.5
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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