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CSC2335 Datasheet(PDF) 2 Page - Continental Device India Limited

No. de pieza CSC2335
Descripción Electrónicos  NPN PLASTIC POWER TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CSC2335 Datasheet(HTML) 2 Page - Continental Device India Limited

  CSC2335 Datasheet HTML 1Page - Continental Device India Limited CSC2335 Datasheet HTML 2Page - Continental Device India Limited CSC2335 Datasheet HTML 3Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Pulse value) (1)
IC
max.
15 A
Base current (DC)
IB
max.
3.5 A
Total power dissipation up to TC = 25°C
Ptot
max.
40 W
Total power dissipation up to TA = 25°C
Ptot
max.
1.5 W
Junction temperature
Tj
max.
150 ºC
Storage temperature
Tstg
–65 to +150 ºC
THERMAL CHARACTERISTICS
From junction to case
Rth j–c
3.125 °C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 400V
ICBO
max.
10 µA
RBE = 51Ω; VCE = 400V; TA = 125°C
ICER
max.
1.0 mA
VBE(off) = 1.5V; VCE = 400V
ICEX
max.
10 µA
VBE(off) = 1.5V; VCE = 400V; TA = 125°C
ICEX
max.
1.0 mA
Emitter cut-off current
IC = 0; VEB = 5V
IEBO
max.
10 µA
Breakdown voltages
IC = 3 A; IB1 = 0.6A; L = 1mH
VCEO(sus)*
min.
400 V
IC = 1 mA; IE = 0
VCBO
min.
500 V
IE = 1 mA; IC = 0
VEBO
min.
7.0 V
Saturation voltages
IC = 3 A; IB = 0.6 A
VCEsat*
max.
1.0 V
VBEsat*
max.
1.2 V
D.C. current gain
IC = 0.1A; VCE = 5V
hFE*
min.
20
max.
80
IC = 1A; VCE = 5V**
hFE*
min.
20
max.
80
IC = 3A; VCE = 5V
hFE*
min.
10
Switching time
IC = 3A; RL = 50Ω
IB1 = –IB2 = 0.6A; VCC = 150V
Turn on time
ton
max.
1.0 µs
Storage time
ts
max.
2.5 µs
Fall time
tf
max.
1.0 µs
* Pulse test: PW ≤ 350 µs; duty cycle ≤ 2% pulsed.
(1) PW ≤ 300 µs; duty cycle ≤ 10%.
** hFE classification: R: 20-40 O: 30-60 Y: 40-80
CSC2335



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