NPN SILICON PLANAR TRANSISTOR

CDU 83

TO-237

BCE

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

20

V

Collector -Base Voltage

VCBO

95

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current Continuous

IC

3.0

A

Peak Collector Current

ICP

6.0

A

Power Dissipation

PD

900

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=50V, IE=0

-

-

1.0

uA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

1.0

uA

DC Current Gain

hFE*

IC=500mA,VCE=2V

100

-

560

IC=3A,VCE=2V

75

-

-

Collector Emitter Saturation Voltage

VCE(Sat) * IC=3A, IB=60mA

-

-

0.60

V

Base Emitter Saturation Voltage

VBE(Sat) * IC=3A, IB=60mA

-

-

`1.50

V

Dynamic Characteristics

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

45

-

pF

Gain Bandwidth Product

ft

VCE=10V, IC=50mA,

-

120

-

MHz

*Pulse Test : tp=300us, Duty Cycle=2%

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company