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IXTX170P10P Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTX170P10P Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXTK170P10P IXTX170P10P IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 7. Input Admittance -160 -140 -120 -100 -80 -60 -40 -20 0 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 VGS - Volts TJ = - 40ºC 25ºC 125ºC Fig. 8. Transconductance 0 10 20 30 40 50 60 70 80 90 100 -160 -140 -120 -100 -80 -60 -40 -20 0 ID - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode -300 -270 -240 -210 -180 -150 -120 -90 -60 -30 0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs VDS = - 50V I D = - 85A I G = -1mA Fig. 11. Capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Forward-Bias Safe Operating Area 1 10 100 1,000 1 10 100 VDS - Volts TJ = 150ºC TC = 25ºC Single Pulse 25µs 100µs RDS(on) Limit - - - - DC, 100ms - - 1ms 10ms - |
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