SILICON DIAC

BIDIRECTIONAL TRIGGER DIODES

DB3, DB4

GLASS PASSIVATED PNPN DEVICE

DO- 35

Glass Axial Package

Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be

used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting

Element in Fluorescent Lamp Ballasts

DESCRIPTION

SYMBOL

VALUE

UNIT

150

mW

µs, f=100Hz)

2

A

Storage Temperature Range

- 40 to +125

ºC

Junction Temperature Range

- 40 to +110

ºC

THERMAL RESISTANCE

Junction to Ambient in free air

400

ºC/W

Junction to Leads

150

ºC/W

SYMBOL

MIN

MAX

UNIT

* Breakover Voltage

28

36

V

35

45

V

Breakover Voltage Symmetry

+ 3

V

* Dynamic Breakover Voltage

I

∆V+ I

5

V

* Output Voltage

5

V

* Breakover Current

50

µA

* Rise Time

TYP 1.5

µs

* Leakage Current

10

µA

* Electrical characteristic applicable in both forward and reverse directions

** Connected in parallel with the devices.

DESCRIPTION

TEST CONDITIONS

** C = 22nF

** C = 22nF

see diagram 1

** C = 22nF

see diagram 1

see diagram 3

see diagram 1

DB3

DB4

∆1=[I

see diagram 1

see diagram 2

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

DB3_DB4Rev_1 190402E