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BF821 Datasheet(PDF) 2 Page - Continental Device India Limited

No. de pieza BF821
Descripción Electrónicos  SILICON EPITAXIAL TRANSISTORS
PDF  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BF821 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BF821
BF823
Collector–base voltage (open emitter)
–VCB0 max. 300
250 V
Collector–emitter voltage (open base)
–VCE0 max. —
250 V
Collector–emitter voltage (RBE = 2,7 kW )–VCER max. 300
— V
Emitter–base voltage (open collector)
–VEB0 max.
5
V
Collector current (d.c.)
–I C
max.
50
mA
Collector current (peak value)
–ICM max.
100
mA
Total power dissipation
up to Tamb = 25 °C
Ptot
max.
250
mW
Storage temperature
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
BF821
BF823
Collector cut–off current
IE = 0; –VCB = 200V
–ICB0 <10
10 nA
Collector–emitter voltage
RBE = 2,7 kW ; VCE = 250 V
–ICER <50
50 nA
RBE = 2,7kW ; VCE = 200V; Tj = 150°C
–ICER <10
10 mA
Saturation voltage
–IC = 30 mA; –lB = 5 mA
–VCEsat<
0,8
V
D.C. current gain
IC = 25 mA; –VCE = 20 V
hFE
>50
Transition frequency at f = 35 MHz
–IC = 10 mA; —VCE = 10 V
fT
>60
MHz
Feedback capacitance at f = 1 MHz
IC = 0; –VCE = 30 V
Cre
<
1,6
pF
BF821
BF823



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