BCW69 datasheet(2/4 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 4

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

–VCB0

max.

50 V

Collector–emitter voltage (VBE = 0)

–VCES

max.

50 V

Collector–emitter voltage (open base)

–IC = 2 mA

–VCE0

max.

45 V

Emitter–base voltage (open collector)

–VEB0

max.

5 V

Collector current (d.c.)

–I C

max.

100 mA

Collector current (peak value)

–ICM

max.

200 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

max.

150 °C

THERMAL RESISTANCE

From junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS

Ti = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; –VCB = 20 V

–ICB0

100 nA

IE = 0; –VCB = 20 V; Tj = 100 °C

–ICB0

<10

µA

Base–emitter voltage

–IC = 2 mA; –VCE = 5 V

–VBE

600 to 750 mV

Saturation voltages

–IC = 10 mA; –lB = 0,5 mA

–VCEsat typ.

80 mV

300 mV

–VBEsat typ.

720 mV

–IC = 50 mA; –lB = 2,5 mA

–VCEsat typ.

150 mV

–VBEsat typ.

810 mV

D.C. current gain

BCW69

BCW70

–IC = 10 µA; –VCE = 5 V

hFE

typ.

150

–IC = 2 mA; –VCE = 5 V

120

215

hFE

260

500

Collector capacitance at f: 1 MHz

lE = Ie = 0; –VCB = 10 V

typ.

4,5

Transition frequency at f = 35 MHz

–IC: 10 mA; –VCE = 5 V

typ.

150

MHz

Noise figure at RS = 2 kΩ

–IC = 200 µA; –VCE = 5 V

f = 1 kHz; B = 200 Hz

BCW69

BCW70

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