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BCW29 Datasheet(PDF) 2 Page - Continental Device India Limited

No. de pieza BCW29
Descripción Electrónicos  SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  3 Pages
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Fabricante Electrónico  CDIL [Continental Device India Limited]
Página de inicio  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BCW29 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
–VCB0 max.
32 V
Collector–emitter voltage (VBE = 0)
–VCES max.
32 V
Collector–emitter voltage (open base)
–IC = 2 mA
–VCE0 max.
32 V
Emitter–base voltage (open collector)
–VEB0 max.
5 V
Collector current (d.c.)
–I C
max.
100 mA
Collector current (peak value)
–ICM
max.
200 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
250 mW
Storage temperature
Tstg
–55 to +150
°C
Junction temperature
Tj
max.
150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
=
500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 32 V
–ICB0
<
100 nA
IE = 0; –VCB = 32 V; Tj = 100 °C
–ICB0
<10 mA
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V
–VBE
600 to 750
mV
Saturation voltages
–IC = 10 mA; –IB = 0,5 mA
–VCEsat typ.
80 mV
<
300 mV
–VBEsat typ.
720 mV
–IC = 50 mA; –IB = 2,5 mA
–VCEsat typ.
150 mV
–VBEsat typ.
810 mV
D.C. current gain
BCW 29
30
–IC = 10 mA; –VCE = 5 V
hFE
typ.
90
150
–IC = 2 mA; –VCE = 5 V
>
120
215
<
260
500
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
Cc
typ.
4,5
pF
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
fT
typ.
150
MHz
Noise figure at RS = 2 kW
–IC = 200 mA; –VCE = 5 V
f = 1 KHz; B = 200 Hz
F
<
10
dB
BCW29
BCW30



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