BC807 datasheet(2/4 Pages) CDIL

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Continental Device India Limited

Data Sheet

Page 2 of 4

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

BC807

BC808

Collector–emitter voltage (VBE = 0)

–VCES max. 50

30 V

Collector–emitter voltage (open base)

–IC = 10 mA

–VCE0 max. 45

25 V

Emitter–base voltage (open collector)

–VEB0 max.

5 V

Collector current (DC)

–IC

max.

500

Collector current (peak value)

–ICM

max.

1000

Emitter current (peak value)

IEM

max.

1000

Base current (DC)

–IB

max.

100

Base current (peak value)

–IBM

max.

200

Total power dissipation at Tamb = 25 °C *

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

°C

Junction temperature

max.

150

°C

THERMAL RESISTANCE*

From junction to ambient

Rth j–a =

500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; –VCB = 20V; Tj = 25°C

–ICB0

max.

100 nA

IE = 0; –VCB = 20V; Tj = 150°C

–ICB0

max.

µA

Emitter cut–off current

IC = 0; VEB = 5 V

–IEB0

max.

µA

Base emitter voltage *

–IC = 500 mA; –VCE = 1 V

–VBE

max.

1,2 V

Saturation voltage

–IC = 500 mA; –IB = 50 mA

–VCEsat max. 700 mV

D.C. current gain

–IC = 500 mA; –VCE = 1 V

hFE

min.

–IC = 100 mA; –VCE = 1 V; BC807; BC808

hFE

100 to 600

BC807–16

hFE

100 to 250

BC808–16

BC807–25

hFE

160 to 400

BC808–25

BC807–40

hFE

250 to 600

BC808–40

Transition frequency at f = 100 MHz

–IC = 10 mA; –VCE = 5 V

>80 MHz

Collector capacitance at f = 1 MHz

IE = Ie = 0; –VCB = 10 V

typ.

8 pF

BC807

BC808

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