SILICON PLANAR EPITAXIAL TRANSISTORS

BC635, 637, 639 NPN

BC636, 638, 640 PNP

TO-92

Plastic Package

High Current Transistor

BC635

BC637

BC636

BC638

UNIT

Collector Emitter Voltage

45

60

V

Collector Base Voltage

45

60

V

Emitter Base Voltage

V

Collector Current Continuous

A

mW

Derate Above 25ºC

mW/ºC

W

W

Derate Above 25ºC

mW/ºC

Operating And Storage Junction

Temperature Range

ºC

THERMAL RESISTANCE

Junction to Case

ºC/W

Junction to Ambient in free air

ºC/W

Junction to Ambient

ºC/W

DESCRIPTION

SYMBOL

TEST CONDITION

MAX

UNIT

Collector Emitter Voltage

BC635/BC636

V

BC637/BC638

V

BC639/BC640

V

Collector Base Voltage

BC635/BC636

V

BC637/BC638

V

BC639/BC640

V

Emitter Base Voltage

V

Collector Cut Off Current

0.1

µA

10

µA

Base Emitter (On) Voltage

1.0

V

Collector Emitter Saturation Voltage

0.5

V

*Pulse Test: Pulse Width < 300

µµs, Duty Cycle 2%

**Transistors mounted on printed circuit board, max Lead Length 4mm, mounting pad for collector lead min

10mm x 10 mm

BC635_BC640Rev_4 030106E

BC639

BC640

80

80

MIN

45

For Lead Free Parts, Device Part #

will be Prefixed with "T"

1.0

- 55 to +150

45

800

6.4

2.75

80

22

5.0

5.0

DESCRIPTION

SYMBOL

60

80

156

1.0

125

45

60

E C

B

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company