PNP EPITAXIAL PLANAR SILICON TRANSISTORS

BC460

BC461

TO-39

Medium Power Amplifier

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BC460

BC461

UNIT

Collector -Base Voltage

VCBO

50

70

V

Collector -Emitter Voltage

VCEO (sus)

40

60

V

Collector -Emitter Voltage RBE=100 ohms

VCER

50

70

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Peak Current

ICM

2.0

A

Power Dissipation @ Tamb=25 deg C

Ptot

1.0

W

@ Tcase=25 deg C

10

W

Operating And Storage Junction

Tj, Tstg

65 to +200

deg C

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth (j-c)

17.5

deg C/W

Junction to Ambient

Rth (j-a)

175

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Cut off Current

ICBO

VCB=40V, IE=0

-

100

nA

RBE=100 ohms

ICER

VCE=50V,

BC460

-

10

uA

VCE=70V,

BC461

-

10

uA

Collector -Emitter Voltage

VCEO *

IC=10mA, IB=0

BC460

40

-

V

BC461

60

-

V

Emitter -Base Voltage

VEBO

IE=100 uA, IC=0

5.0

-

V

DC Current Gain

hFE*

IC=500mA,VCE=4V

40

250

IC=1A,VCE=2V

BC460

20

-

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=1A, IB=100mA

-

1.0

V

Base Emitter Saturation Voltage

VBE(Sat) *

IC=1A, IB=100mA

-

1.5

V

Transition Frequency

ft

IC=50mA, VCE=4V

50

-

MHz

f=1MHz

Pulse: Pulse duration=300us, Duty Cycle=1%

Continental Device India Limited

Data Sheet

Page 1 of 2

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company