SILICON PLANAR EPITAXIAL TRANSISTORS

BC 307, A, B, C

BC 308, A, B, C

BC 309, A, B, C

TO-92

Plastic Package

General Purpose Transistors Deisgned For Small Signal Amplification

From DC To Low Radio Frequencies

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

BC307 BC308 BC309

UNITS

Collector Emitter Voltage

45

25

25

V

Collector Base Voltage

50

30

30

V

Emitter Base Voltage

55

5

V

Collector Current Continuous

100

mA

Power Dissipation@ Ta=25ºC

350

mW

Derate Above 25ºC

2.8

mW/°C

Power Dissipation@ Tc=25ºC

1W

Derate Above 25ºC

8

mW/°C

Operating And Storage Junction

-55 to +150

°C

Temperature Range

THERMAL RESISTANCE

Junction to ambient

357

°C/W

Junction to case

125

°C/W

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company