BAV21 datasheet(2/4 Pages) GE

No. de pieza	BAV21

Descripción Electrónicos	Small Signal Diodes

PDF	4 Pages

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Fabricante Electrónico	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BAV19 THRU BAV21

Symbol

Min.

Typ.

Max.

Unit

Forward voltage at IF = 100 mA

––1

Leakage Current

at VR = 100 V

BAV19

at VR = 100 V, Tj = 100 °C

BAV19

at VR = 150 V

BAV20

at VR = 150 V, Tj = 100 °C

BAV20

at VR = 200 V

BAV21

at VR = 200 V, Tj = 100 °C

BAV21

–

100

µA

Dynamic Forward Resistance

at IF = 10 mA

–5–

Ω

Capacitance

at VR = 0, f = 1 MHz

Ctot

–1.5

–pF

Reverse Recovery Time

from IF = 30 mA through IR = 30 mA to

IR = 3 mA; RL = 100 Ω

trr

––50

Thermal Resistance

Junction to Ambient Air

RthJA

–

3751) 2)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

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