EDF1AS datasheet(2/2 Pages) GE

No. de pieza	EDF1AS

Descripción Electrónicos	MINIATURE GLASS PASSIVATED FAST EFFICIENT SURFACE MOUNT BRIDGE RECTIFIER

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	GE [General Semiconductor]

Página de inicio	http://www.vishay.com

Logo

2 / 2 page

100

120

140

160

0.25

0.5

0.75

1.0

100

0.1

100

5.0

200

0.4

0.6

0.01

0.1

0.8

1.0

1.2

1.4

020

100

0.1

100

1,000

RATINGS AND CHARACTERISTICS CURVES EDF1AS THRU EDF1DS

FIG. 1 - DERATING CURVES OUTPUT

RECTIFIED CURRENT

AMBIENT TEMPERATURE, °C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

TJ=25°C

PULSE WIDTH=300

µs

1% DUTY CYCLE

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS PER LEG

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

PER LEG

REVERSE VOLTAGE, VOLTS

TJ=25

°C

f=1.0 MHZ

Vsig=50mVp-p

TJ=125°C

CAPACITIVE

LOADS

Ipk / IAV=5.0

Ipk / IAV=10

Ipk / IAV=20

FIG. 3 - TYPICAL FORWARD CHARACTERISTICS

PER LEG

SINGLE SINE-WAVE

(JEDEC Method)

TJ=150°C

NUMBER OF CYCLES AT 60 Hz

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

TJ=25°C

IPK/IAV=

π RESISTIVE OR

INDUCTIVE LOAD

0.51 x 0.51” (13 x 13mm)

COPPER PADS

1.0 CYCLE

EDF1AS Datasheet(PDF) 2 Page - General Semiconductor

EDF1AS Datasheet(HTML) 2 Page - General Semiconductor

Html Pages

1 2

Datasheet Descarga

Enlace URL