IMBD4148 datasheet(2/4 Pages) GE

No. de pieza	IMBD4148

Descripción Electrónicos	Small Signal Diodes

PDF	4 Pages

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Fabricante Electrónico	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

IMBD4148

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 10 mA

––1

Leakage Current

at VR = 70 V

at VR = 70 V, Tj = 150 °C

at VR = 25 V, Tj = 150 °C

–

2.5

µA

Capacitance

at VF = VR = 0

Ctot

––4pF

Reverse Recovery Time

from IF = 10 mA to IR = 10 mA

VR = 6 V, RL = 100 Ω

trr

––4ns

Thermal Resistance

Junction to Ambient Air

RthJA

–

4501)

K/W

1) Device on fiberglass substrate, see layout

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

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