IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH3N150

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.2

3.6

S

C

iss

1375

pF

C

oss

V

90

pF

C

rss

30

pF

t

d(on)

19

ns

t

r

21

ns

t

d(off)

42

ns

t

f

25

ns

Q

g(on)

38.6

nC

Q

gs

V

6.5

nC

Q

gd

19.0

nC

R

thJC

0.50

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

3

A

I

SM

Repetitive, Pulse Width Limited by T

JM

12

A

V

SD

I

1.3

V

t

rr

0.9

μs

I

RM

15.0

A

Q

RM

6.7

μC

Resistive Switching Times

V

R

I

V