MMBTA06 datasheet(2/2 Pages) GE

No. de pieza	MMBTA06

Descripción Electrónicos	Small Signal Transistors (NPN)

PDF	2 Pages

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Fabricante Electrónico	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

SYMBOL

MIN.

.MAX.

UNIT

Collector-Emitter Breakdown Voltage

at IC = 1 mA, IB = 0

V(BR)CEO

–

Emitter-Base Breakdown Voltage

at IE = 100

µA, IC = 0

V(BR)EBO

4.0

–

Collector-Emitter Cutoff Current

VCE = 60 V, IB = 0

ICES

–

100

Collector-Base Cutoff Current

VCB = 80 V, IE = 0

ICBO

–

100

Collector Saturation Voltage

at IC = 100 mA, IB = 10 mA

VCEsat

–

0.25

Base-Emitter On Voltage

at IC = 10 mA, IB = 1 mA

VBE(on)

–

1.2

DC Current Gain

at VCE = 1 V, IC = 10 mA

hFE

100

–

at VCE = 1 V, IC = 100 mA

hFE

100

–

Gain-Bandwidth Product

at VCE = 2 V, IC = 10 mA, f = 100 MHz

100

–

MHz

MMBTA06

0.59 (15)

0.2 (5)

0.03 (0.8)

0.30 (7.5)

0.12 (3)

.04 (1)

0.06 (1.5)

0.20 (5.1)

.08 (2)

.04 (1)

0.47 (12)

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