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2SA1374 Datasheet(PDF) 2 Page - Hitachi Semiconductor

No. de pieza 2SA1374
Descripción Electrónicos  Silicon PNP Epitaxial
PDF  5 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SA1374 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SA1374
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Base current
I
B
–30
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
—
V
I
C = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E = –10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
–0.1
µAV
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
—
—
–0.05
µAV
EB = –2 V, IE = 0
DC current transfer ratio
h
FE*
1
160
—
500
V
CE = –12 V, IC = –2 mA
Base to emitter voltage
V
BE
—
–0.66
–0.75
V
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.1
–0.5
V
I
C = –10 mA, IB = –1 mA
Gain bandwidth product
f
T
—
250
—
MHz
V
CE = –12 V, IC = –2 mA
Collector output capacitance
Cob
—
2.5
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Note:
1. The 2SA1374 is grouped by h
FE as follows.
CD
160 to 320
250 to 500
See characteristic curves of 2SA836.



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