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2SC1907 Datasheet(PDF) 2 Page - Hitachi Semiconductor

No. de pieza 2SC1907
Descripción Electrónicos  Silicon NPN Epitaxial Planar
PDF  7 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC1907 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC1907
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
19
V
Emitter to base voltage
V
EBO
2V
Collector current
I
C
50
mA
Emitter current
I
E
–50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
19
—
—
V
I
C = 3 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
2—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µAV
CB = 10 V, IE = 0
DC current transfer ratio
h
FE
40
—
—
V
CE = 10 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
1.0
V
I
C = 20 mA, IB = 4 mA
Collector output capacitance
Cob
—
1.0
2.0
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
900
1100
—
MHz
V
CE = 10 V, IC = 10 mA
Base time constant
r
bb’
•
C
C
—1025
ps
V
CB = 10 V, IC = 10 mA,
f = 31.8 MHz
Oscillation output power
P
out
—8
—mW
V
CB = 10 V, IC = 10 mA,
f = 930 MHz



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