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2SC5545 Datasheet(PDF) 2 Page - Hitachi Semiconductor

No. de pieza 2SC5545
Descripción Electrónicos  Silicon NPN Epitaxial VHF / UHF wide band amplifier
PDF  8 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC5545 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC5545
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
——V
I
C = 10µA , IE = 0
Collector cutoff current
I
CBO
——
1
µAV
CB = 12V , IE = 0
Collector cutoff current
I
CEO
——
1
mA
V
CE = 6V , RBE = Åá
Emitter cutoff current
I
EBO
——
10
µAV
EB = 1.5V , IC = 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE = 3V , IC = 20mA
Collector output capacitance
Cob
—
0.69
1.1
pF
V
CB = 3V , IE = 0
f = 1MHz
Gain bandwidth product
f
T
10
12.6
—
GHz
V
CE = 3V , IC = 20mA
Power gain
PG
14
16
—
dB
V
CE = 3V, IC = 20mA
f = 900MHz
Noise figure
NF
—
1.1
2.0
dB
V
CE = 3V, IC = 5mA
f = 900MHz



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