IXTY3N60P datasheet(1/4 Pages) IXYS

No. de pieza	IXTY3N60P

Descripción Electrónicos	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 150° C

600

V

DGR

T

J

= 25

° C to 150° C; R

GS = 1 MΩ

600

V

GS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25° C

3.0

A

I

DM

T

C = 25° C, pulse width limited by TJM

6A

I

AR

T

C = 25° C3

A

E

AR

T

C = 25° C10

mJ

E

AS

T

C = 25° C

100

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS

5

V/ns

T

J

≤150° C, R

G = 30 Ω

P

D

T

C = 25° C70

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

Weight

TO-220

4

g

TO-263

3

g

TO-252

0.35

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 50 µA

3.0

5.5

V

I

GSS

V

GS = ± 30 VDC, VDS = 0

± 100

nA

I

DSS

V

DS = VDSS

5

µA

V

GS = 0 V

T

J = 125° C50

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25, Note 1

2.9

Ω

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXTA 3N60P

IXTP 3N60P

IXTY 3N60P

V

DSS

= 600

V

I

D25

= 3.0

A

R

DS(on)

≤≤≤≤≤ 2.9

Ω

DS99449E(04/06)

G = Gate

D = Drain

S = Source

TAB = Drain

TO-220 (IXTP)

S

TO-252 (IXTY)

(TAB)

TO-263 (IXTA)

G

S

D

G

(TAB)

G

S

(TAB)

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IXTY3N60P Datasheet(PDF) 1 Page - IXYS Corporation

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