©Silikron Semiconductor CO.,LTD.

2

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v1.2

SSF2418EB

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±10

uA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

0.5

1

V

Drain-Source On-State Resistance

18

21

mΩ

19

22

mΩ

21

26

mΩ

25

30

mΩ

Forward Transconductance

7

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

F=1.0MHz

650

PF

Output Capacitance

170

PF

Reverse Transfer Capacitance

150

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

20

nS

Turn-on Rise Time

50

nS

Turn-Off Delay Time

64

nS

Turn-Off Fall Time

40

nS

Total Gate Charge

8

nC

Gate-Source Charge

1.5

nC

Gate-Drain Charge

2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.76

1.1

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.