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SW50CPF06 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

No. de pieza SW50CPF06
Descripción Electrónicos  DIODE
PDF  4 Pages
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Fabricante Electrónico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de inicio  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW50CPF06 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
Features
■ Ultrafast recovery time
■ Low forward voltage drop
■ 150 °C operating junction temperature
■ Low leakage current
■ Designed and qualified according to
JEDEC-JESD47
DIODE
Absolute maximum ratings
1/4
VR
: 620V
IF(AV)
: 50A
VF at IF : 1.5V
SW50CPF06
SAMWIN
Item
Sales Type
Marking
Package
Packaging
1
SW W 50CPF06
SW50CPF06
TO-3P
TUBE
Order Codes
Symbol
Parameter
Value
Unit
V
R
Repetitive peak reverse voltage
620
V
I
F(AV)
Average rectified forward current (@T
C=150
oC)
50
A
TJ, TStg
Operating junction and storage temperatures
-55 ~ + 150
oC
General Description
This FRED is designed with optimized performance of forward voltage drop and ultrafast
recovery time. the platinum doped life time control, guarantee the best overall performance
ruggedness and reliability characteristics. This devices are intended for use in the
output rectification stage of SMPS, UPS, DC/DC converters as freewheeling diode in
low voltage inverters. Their extremely optimized stored charge and low recovery current
minimize the switching losses and reduce over dissipation in the switching element.
1. Anode 2. Gathode 3. Anode
1
2
3
TO-3P
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
R
Breakdown voltage,blocking voltage
IR=100uA
620
V
V
F
Forward voltage
I
F=3A
0.9
1.13
V
I
F=50A
1.5
V
I
F=50A, TJ= 150 °C
1.3
V
I
R
Reverse leakage current
V
R=600V
500
nA
V
R=600V, TJ= 150 °C
500
uA
CT
Junction capacitance
V
R=600V
30
pF


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