ATF36077 datasheet(2/4 Pages) HP

2 / 4 page

5-76

ATF-36077 Electrical Specifications,

TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Noise Figure[1]

f = 12.0 GHz

0.5

0.6

Gain at NF[1]

f = 12.0 GHz

11.0

12.0

Transconductance

VDS = 1.5 V, VGS = 0 V

Idss

Saturated Drain Current

VDS = 1.5 V, VGS = 0 V

Vp10%

Pinch-off Voltage

VDS = 1.5 V, IDS = 10% of Idss

-1.0

-0.35

-0.15

Note:

1. Measured in a fixed tuned environment with

Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.

Thermal Resistance[2,3]:

ch-c = 60°C/W

Notes:

1. Operation of this device above any one

of these parameters may cause

permanent damage.

2. Measured at Pdiss = 15 mW and

Tch = 100°C.

3. Derate at 16.7 mW/

°C for T

C > 139°C.

ATF-36077 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

VDS

Drain – Source Voltage

VGS

Gate – Source Voltage

-3

VGD

Gate-Drain Voltage

-3.5

Drain Current

Idss

Total Power Dissipation[3]

180

Pin max

RF Input Power

dBm

+10

Tch

Channel Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

ATF-36077 Characterization Information,

TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).

Symbol

Parameters and Test Conditions

Units

Typ.

Noise Figure (Tuned Circuit)

f = 4 GHz

0.3[2]

f = 12 GHz

0.5

Gain at Noise Figure (Tuned Circuit)

f = 4 GHz

f = 12 GHz

S12 off

Reverse Isolation

f = 12 GHz, VDS = 1.5 V, VGS = -2 V

P1dB

Output Power at 1 dB Gain Compression

f = 4 GHz

dBm

f = 12 GHz

dBm

VGS 10 mA

Gate to Source Voltage for IDS = 10 mA

VDS = 1.5 V

-0.2

Note:

2. See noise parameter table.

ATF36077 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

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