MBR1550 datasheet(1/4 Pages) MAKOSEMI

No. de pieza	MBR1550

Descripción Electrónicos	High current capability, low forward voltage

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Fabricante Electrónico	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Página de inicio	http://www.makosemi.hk/

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　特征：超薄封装，体积小，超低压降等特点

Single pulse davalanche energy (IAS=12A, L=10mH)

EAS

RATING

SYMBOL

CHARACTERISTIC

Repetitive peak reverse voltage

FEATURES

■

High current capability, low forward voltage

■

Excellent high temperature stability

■

Low power loss, and high ef ficiency

■

High Forward Surge Capability

■

Patented package technology

APPLICATIONS

■

Switching mode power supply applications

■

Portable equipment battery applications

■

High frequency rectification

■

DC/DC Converter

■

Designed as bypass diodes for solar panels

■

ABSOLUTE MAXIMUM RATINGS (TA=25°C,unless otherwise specified)

UNIT

VRRM

50

V

mJ

Surge non repetitive forward current (8.3ms single half sine- wave)

A

Maximum DC blocking voltage

VRM

50

Averageforward current

IF(AV)

15

Tstg

-55~+150

IFSM

530

295

℃

Junction Temperature

TJ

150

0.36

■

Electrical Characteristics

Symbol

Characterisrtic

Min

Typ

Max

UNIT

Rating

TJ=125℃

0.41

0.46

0.47

--

0.41

--

0.40

IF=15A

VR=Max.VRRM

--

0.43

--

0.076

TJ=25℃

16

Reverse leakagecurrent

TJ=25℃

IR

60

VF

0.30

--

mA

V

Test Condition

Fo rward voltagedrop

--

0.33

RQJA

(1)

73

Storage Temperature

TJ=100℃

IF=10A

IF=3A

　 Note: 1. FR-4 PCB, 2oz. Copper.

　 Note: 2. Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm × 14.4mm. Anode pad dimensions 5.6mm × 14.4mm.

RQJA

(2)

31

Thermal Resistance, Junction-to-Ambiene

℃

/W

RIGHT PIN

BOTTOMSIDE

HEAT SINK

SYMBOL

Package: TO-277B (SMD)

Top View　　　　　　Bottom View

LEFT PIN

1550 TO-277B

1

5A, 50V 贴片肖特基整流二极管

Low VF Schottky Rectifier SMD

4008-378-873

1

MAKO Semiconductor Co., Limited

1/4

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www.makosemi.hk/

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