ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 28-Jun-11

2

Document Number: 83646

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Additional options may be possible, please contact sales office.

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole devices (DIP).

VDE, UL, CSA, BSI, FIMKO

20 to 300

100 to 500

50 to 400

20 to 300

100 to 500

50 to 400

DIP-8

ILD1-X001

ILD2-X001

ILD5-X001

-

-

-

DIP-8, 400 mil, option 6

-

ILD2-X016

-

-

-

-

SMD-8, option 7

-

ILD2-X017

-

-

-

-

SMD-8, option 9

ILD1-X019T

-

-

-

-

-

DIP-16

-

-

-

-

ILQ2-X001

-

DIP-16, 400 mil, option 6

-

-

-

-

ILQ2-X016

-

SMD-16, option 7

-

-

-

-

-

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Surge current

2.5

A

Power dissipation

100

mW

Derate linearly from 25 °C

1.3

mW/°C

OUTPUT

Collector emitter reverse voltage

ILD1

50

V

ILQ1

50

V

ILD2

70

V

ILQ2

70

V

ILD5

70

V

ILQ5

70

V

Collector current

50

mA

t < 1 ms

400

mA

Power dissipation

200

mW

Derate lineary from 25 °C

2.6

mW/°C

COUPLER

Isolation test voltage

between emitter and detector

5300

Creepage distance

 7mm

Clearance distance

 7mm

Isolation resistance



Package power dissipation

250

mW

Derate linearly from 25 °C

3.3

mW/°C

Storage temperature

- 40 to + 150

°C

Operating temperature

- 40 to + 100

°C

Junction temperature

100

°C

2 mm from case bottom

260

°C

AGENCY CERTIFIED/PACKAGE

DUAL CHANNEL

QUAD CHANNEL

CTR (%)