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Plastic-Encapsulate Diodes

SWITCHING

DIODES

FEATURES

Low forward voltage : VF(3)=0.9V(typ.)

Fast reverse recovery time : trr=1.6ns(typ.)

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse

voltage

V

RM

85

V

DC Blocking

Voltage

V

R

80

V

Forward Continuous Current

I

FM

300

mA

Average Rectified Output

Current

I

O

100

mA

Power Dissipation

P

D

150

mW

Junction temperature

T

J

125

Storage temperature range

T

STG

-55-125

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage

V

(BR)R

80

V

I

Forward voltage

V

F1

0.60

V

I

V

F2

0.72

V

I

V

F3

0.90

1.2

V

I

Reverse current

I

R1

0.1

uA

V

I

R2

0.5

uA

V

Capacitance between terminals

C

T

0.9

3.0

pF

V

Reverse recovery time

t

r r

1.6

4.0

ns

I

1. N.C.

2. ANODE

SOT-23

3. CATHODE

1SS196

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/