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BAV70 Datasheet(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

No. de pieza BAV70
Descripción Electrónicos  SCHOTTKY DIODES
PDF  2 Pages
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Fabricante Electrónico  MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]
Página de inicio  http://www.makosemi.hk/
Logo MAKOSEMI - MAKO SEMICONDUCTOR CO.,LIMITED

BAV70 Datasheet(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

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MAKO Semiconductor Co., Limited
SCHOTTKY DIODES
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
MARKING:
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Limit
s
Unit
Reverse voltage
V
R
70
0
V
Forward Current
I
F
200
0
0
mA
Peak Forward Surge Current
IFM(surge)
500
0
0
mA
Power Dissipation
P
D
225
2
5
mW
Thermal Resistance Junction to Ambient Air
RθJ
A
556
5
6
/W
Junction temperature
T
J
150
5
0
Storage temperature range
TST
G
-55-150
50
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse Breakdown Voltage
V R
70
V
IR=100μA
Forward voltage
VF1
0.715
V
IF=1mA
VF2
0.855
V
IF=10mA
VF3
1
V
IF=50mA
VF4
1.25
V
IF=150mA
Reverse current
IR
2.5
μA
VR=70V
Capacitance between terminals
CT
1.5
pF
VR=0,f=1MHz
Reverse recovery time
t rr
6
ns
IF = IR = 10mA,
Irr= 0.1 x IR, RL = 100Ω
BAW56:A1
BAV70:A4
BAV99:A7
Plastic- Encapsulate Diodes
SOT-23
BAW56/BAV70/BAV99


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