2SB736-BW1-HF datasheet(1/3 Pages) KEXIN

No. de pieza	2SB736-BW1-HF

Descripción Electrónicos	PNP Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

■

Features

●

High DC current gain hFE:200(TYP)

●

Complimentary to 2SD780-HF

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1.Base

2.Emitter

3.collector

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-60

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-300

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-60

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= - 50V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage (Note.1)

VCE(sat) IC=-300 mA, IB=-30mA

-0.35 -0.6

Base - emitter saturation voltage

(Note.1)

VBE(sat) IC=-300 mA, IB=-30mA

-1.2

Base - emitter voltage

(Note.1)

VBE

VCE= -6V, IC= -10mA

-600 -660 -700

VCE= -1 V, IC= -50mA

110

200

400

VCE= -2V, IC= -300mA

30

Collector output capacitance

Cob

VCB= -6V, IE= 0,f=1MHz

13

pF

Transition frequency

fT

VCE= -6V, IE= 10mA

100

MHz

hFE

DC current gain

(Note.1)

V

uA

Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

■

Classification of hfe(1)

mV

●

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

Type

2SB736-BW1-HF

2SB736-BW2-HF

2SB736-BW3-HF

2SB736-BW4-HF

2SB736-BW5-HF

Range

110-180

135-220

170-270

200-320

250-400

Marking

BW1 F

BW2 F

BW3 F

BW4 F

BW5 F

PNP Transistors

2SB736-HF

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