2SB1308-R datasheet(1/2 Pages) KEXIN

No. de pieza	2SB1308-R

Descripción Electrónicos	PNP Transistors

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Fabricante Electrónico	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

PNP Transistors

2SB1308

■

Features

●

Power Transistor

●

Excellent DC current Gain

●

Low Collector-emitter Saturation Voltage

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 uA， IE=0

-30

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, IB=0

-20

Emitter - base breakdown voltage

VEBO

IE= -100 uA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -25V , IE=0

-0.5

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.5

Collector-emitter saturation voltage

VCE(sat) IC=-1.5 A, IB=-150 mA

-0.45

Base - emitter saturation voltage

VBE(sat) IC=-1.5 A, IB=-150 mA

-1.2

DC current gain

hFE

VCE= -2V, IC= -500 mA

82

390

Collector output capacitance

Cob

VCB= -20V, IE= 0,f=1MHz

60

pF

Transition frequency

fT

VCE= -6V, IC= -50 mA,f=30MHz

120

MHz

V

uA

V

■

Classification of hfe

Type

2SB1308-P

2SB1308-Q

2SB1308-R

Range

82-180

120-270

180-390

Marking

BF P*

BF Q*

BF R*

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-30

Collector - Emitter Voltage

VCEO

-20

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

A

Collector Power Dissipation

PC

500

mW

Thermal Resistance From Junction To Ambient

RθJA

250

℃

/W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

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2SB1308-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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