FSTJ9055R datasheet(4/8 Pages) INTERSIL

No. de pieza	FSTJ9055R

Descripción Electrónicos	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	INTERSIL [Intersil Corporation]

Página de inicio	http://www.intersil.com/cda/home

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FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM

FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

TC, CASE TEMPERATURE (

oC)

150

100

-50

100

-1

VDS, DRAIN TO SOURCE VOLTAGE (V)

-10

-100

-200

500

100

µs

1ms

10ms

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

TC = 25

100ms

CHARGE

QGD

QGS

-12V

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

TJ, JUNCTION TEMPERATURE (

oC)

PULSE DURATION = 250ms, VGS = -12V, ID = 39A

0.1

0.01

10-5

10-4

10-3

10-2

10-1

100

101

t, RECTANGULAR PULSE DURATION (s)

0.001

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x Z

θJC + TC

SINGLE PULSE

0.05

0.5

0.02

0.1

0.01

0.2

FSTJ9055D, FSTJ9055R

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