3

Input Capacitance

f = 1MHz

-

4100

-

pF

Output Capacitance

-

520

-

pF

Reverse Transfer Capacitance

-

160

-

pF

Thermal Resistance Junction to Case

R

-

-

0.6

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

0.6

-

1.8

V

Reverse Recovery Time

-

-

1100

ns

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

400

-

V

Gate to Source Threshold Volts

(Note 3)

1.5

4.0

V

Gate to Body Leakage

(Notes 2, 3)

-

100

nA

Zero Gate Leakage

(Note 3)

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

-

4.85

V

Drain to Source On Resistance

(Notes 1, 3)

-

0.210

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

(V)

(NOTE 6)

MAXIMUM

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating Area

SEESOA

Ni

26

43

-15

400

Ni

26

43

-20

360

Br

37

36

-5

400

Br

37

36

-10

320

Br

37

36

-15

200

Br

37

36

-20

80

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FSYC360D, FSYC360R