FDN304P-3 datasheet(2/4 Pages) KEXIN

2 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

FDN304P (KDN304P)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V, VGS=0V

-1

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8 V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

(Note.1)

-0.4

-1.5

VGS=-4.5V, ID=-2.4A

(Note.1)

VGS=-2.5V, ID=-2A

(Note.1)

VGS=-1.8V, ID=-1.8A

(Note.1)

100

On state drain current

ID(ON)

VGS=-4.5V, VDS=-5V

-10

Forward Transconductance

gFS

VDS=-5V, ID=-1.25A

Input Capacitance

Ciss

1312

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

106

Total Gate Charge

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-0.42

Diode Forward Voltage

VSD

IS=-0.42A,VGS=0V

-1.2

mΩ

VGS=-4.5V, VDS=-10V, ID=-1A,RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=-4.5V, VDS=-10V, ID=-2.4A

Note.1: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%

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Marking

304

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