Any changing of specification will not be informed individual

BC857S

PNP Silicon

Multi-Chip Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Operating & Storage junction Temperature

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

* Features

Power dissipation

Collector current

Collector-base voltage

O

O

O

Collector-base breakdown voltage

Ic=-

-

50

V

Collector-emitter breakdown voltage

Ic=-

-

45

V

Emitter-base breakdown voltage

-5

V

Collector cut-off current

-

15

nA

DC current gain

125

630

-0.3

V

Collector-emitter saturation voltage

-0.65

V

-0.6

-

0.75

V

Base-emitter voltage

-0.82

V

Transition frequency

200

MHz

Collector output capacitance

3.5

pF

Noise figure

NF

2.5

dB

Ω

Marking : 3C

Note: 1 Short duration test pulse used to minimize self-heating effect.

01-Jan-2006 Rev. B

Page 1 of 2

RoHS Compliant Product

SOT-363

Dimensions in inches and (millimeters)

.014(0.35)

.006(0.15)

.087(2.20)

.079(2.00)

.055(1.40)

.047(1.20)

.026TYP

(0.65TYP)

.096(2.45)

.085(2.15)

.021REF

(0.525)REF

.018(0.46)

.010(0.26)

.006(0.15)

.003(0.08)

.053(1.35)

.045(1.15)

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

.004(0.10)

.000(0.00)

8

o

o

0