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ACE2302C Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2302C Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE2302C N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as load switch or in PWM applications. Features 20V/5.1A R DS(ON) =28 mΩ (typ.) @ V GS=4.5V R DS(ON) =38 mΩ (typ.) @ V GS=2.5V R DS(ON) =60 mΩ (typ.) @ V GS=1.8V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID 5.1 A TA=70℃ 4 Drain Current (Pulsed) IDM 20 A Power Dissipation TA=25℃ PD 1 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 3 1 2 Ordering information ACE2302C XX + H SOT-23-3 Description Function 1 G Gate 2 S Source 3 D Drain BM : SOT-23-3 Pb - free Halogen - free |
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