Product Summary

Part Number

IRFN250

200V

0.100

Ω

27.4A

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.1549

200 Volt, 0.100

Ω

Ω

Ω

Ω

Ω HEXFET

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

IRFN250

Absolute Maximum Ratings

Parameter

IRFN250

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

27.4

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

17

IDM

110

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

VGS

Gate-to-Source Voltage

±20

V

EAS

500

mJ

IAR

27.4

A

EAR

15.0

mJ

dv/dt

5.0

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

g

A

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