SMS318_15 datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SMS318

220mA, 50V, RDS(ON) 3.5 

N-Channel Enhancement MOSFET

27-Sep-2013 Rev. E

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0, ID = 250μA

Gate-Body Leakage Current

IGSS

±100

VGS=±20V, VDS =0

0.5

μA

VGS=0, VDS =50V

Zero Gate Voltage Drain Current

IDSS

100

VGS=0, VDS =30V

On Characteristics

Gate Threshold Voltage

VGS(th)

0.8

1.5

VDS = VGS, ID =1mA

3.5

VGS=10V, ID =0.22A

Static Drain-Source On Resistance

RDS(ON)

Ω

VGS=4.5V, ID =0.22A

Forward Transconductance

gFS

120

VDS=10V,,ID =0.22A

Dynamic Characteristics

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=25V,

VGS=0,

f=1MHz

Switching Characteristics

Turn-On Delay Time

1,2

td(ON)

Rise time

1,2

Turn-Off Delay Time

1,2

td(OFF)

Fall time

1,2

VDD=30V,

VDS=10V,

ID=0.29A,

RGEN=6Ω,

Drain-source body diode characteristics

Body diode forward voltage

VSD

1.4

VGS=0, IS =0.44A

Notes:

Pulse Test ; Pulse Width ≤300μs, Duty Cycle ≤2%.

These parameters have no way to verify.

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