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AN3095 Datasheet(PDF) 47 Page - STMicroelectronics |
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AN3095 Datasheet(HTML) 47 Page - STMicroelectronics |
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47 / 55 page ![]() AN3095 Experimental results Doc ID 16555 Rev 3 47/55 The PWM embedded peripheral used for the DC-AC stage is configured to generate a triangular carrier at 17.4 kHz with a resolution of 16,6 ns and programmable dead-time insertion to avoid cross-conduction. For the sake of security the complementary pairs must be disabled synchronously in the case of power stage failure/fault (e.g. overcurrent) and this is performed by a dedicated emergency stop input embedded in the peripheral. Inverter output voltage and current are shown in Figure 36, 37, 38 and 39 at different power levels and both in standalone and grid-connected operation. The efficiency of the DC-DC converter and overall system is shown in Figure 40 and 41, with different values of input voltage. Further improvements in terms of efficiency are possible using the hybrid inverter topology (two low frequency IGBTs and two high frequency MOSFETs). In this case the modulating strategy controlling the high-side devices (MOSFETs) and the low-side devices (IGBTs) must be modified according to the information in Figure 42 and 43, where the modulation used for the high-side and low-side devices is shown. The proposed converter performs with a power factor value higher than 90 % for any power level above 1 % of Figure 32. DC-DC phase-shift modulation Figure 33. Phase-shifted signals, transformer current in CCM, power MOSFET M1 drain current Figure 34. Power MOSFET M1- Ch1 gate signal; Ch2 drain-source voltage and drain current Ch4 Figure 35. Phase-shifted gate signals (Ch1, Ch2), primary and secondary transformer voltage (Ch3, Ch4) |
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