AN3161 datasheet(12/14 Pages) STMICROELECTRONICS

No. de pieza	AN3161

Descripción Electrónicos	Using the STGW35HF60WD advanced PT IGBT in parallel

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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12 / 14 page

Conclusion

AN3161

12/14

Doc ID 17151 Rev 1

Conclusion

Several tests performed on the new advanced planar PT STGW35HF60WD show that

STMicroelectronics’ advanced PT technology can be paralleled with satisfactory

performance in terms of thermal and current sharing. Reliable paralleling, however, requires

good thermal feedback implementation and VCE(sat) selection of the total IGBT population.

Both of these factors provide a balancing mechanism to reduce and keep stable the

dynamic

∆IC at operating conditions. Finally, the STGW35HF60WD is offered in three

different VCE(sat) groups, as shown in Table 2: Suggested VCE(sat) (@20 A, 25 °C, 15 V)

selection as per datasheet and as reported in the datasheet, for a safe parallel connection

without risk of thermal runaway.

Table 2.

Suggested VCE(sat) (@20 A, 25 °C, 15 V) selection as per datasheet

(1)

The VCE(sat) grouping reported above is slightly different from the one in Figure 6, in order to meet the

testing rules.

Group “A”

Group “B”

Group “C”

1.68 V

− 1.92 V

1.88 V

− 2.17 V

2.13 V

− 2.5 V

@20 A, 25 °C, 15 V

AN3161 Datasheet(PDF) 12 Page - STMicroelectronics