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SCR005 Datasheet(PDF) 1 Page - Solid States Devices, Inc

No. de pieza SCR005
Descripción Electrónicos  SILICON CONTROLLED
PDF  2 Pages
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Fabricante Electrónico  SSDI [Solid States Devices, Inc]
Página de inicio  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

SCR005 Datasheet(HTML) 1 Page - Solid States Devices, Inc

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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• Low-Level Gate Characteristics
• IGT = 200 µA (Max) @ 25oC
• Low Holding Current IH = 1 mA (Max) @ 25oC
• Anode Common to Case
• Hermetically Sealed
• TX, TXV, S-Level Screening Available. Consult
Factory
SFS1826 thru SFS1829
1.6 AMPS
200 ─ 400 VOLTS
SILICON CONTROLLED
RECTIFIER
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS1826
SFS1827
SFS1828
SFS1829
VDRM
VRRM
200
250
300
400
Volts
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
SFS1826
SFS1827
SFS1828
SFS1829
VRSM
300
350
400
500
Volts
RMS On-State Current
(All Conduction Angles)
IT (RMS)
1.6
Amps
Average On-State Current
TC = 50
oC
TA = 25
oC
IT (AV)
1.0
0.7
Amps
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TC = 80
oC )
ITSM
15
Amps
Peak Gate Power
PGM
0.1
Watts
Average Gate Power
PG (AV)
0.01
Watts
Peak Gate Current
IGM
0.1
Amps
Peak Gate Voltage
VGM
6.0
Volts
Operating Junction Temperature Range
TJ
-65 to +200
oC
Storage Temperature Range
Tstg
-65 to +200
oC
Thermal Resistance, Junction to Case
RθJC
72
oC/W


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