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MMBD2004SW Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza MMBD2004SW
Descripción Electrónicos  HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE
PDF  4 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
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MMBD2004SW Datasheet(HTML) 2 Page - Diodes Incorporated

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MMBD2004SW
Document number: DS30443 Rev. 8 - 2
2 of 4
www.diodes.com
August 2013
© Diodes Incorporated
MMBD2004SW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
240
V
RMS Reverse Voltage
VR(RMS)
170
V
Forward Continuous Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
250
mW
Thermal Resistance Junction to Ambient Air (Note 6)
RJA
500
C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
300
V
IR = 100µA
Forward Voltage
VF
0.87
1.0
V
IF = 20mA
IF = 100mA
Peak Reverse Current (Note 7)
IR
100
nA
µA
VR = 240V
VR = 240V, TJ = +150C
Total Capacitance, per Element
CT
5.0
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
50
ns
IF = IR = 30mA,
Irr = 3.0mA, RL = 100
Notes:
6. Part mounted on FR-4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve, Total Package
A
°
0
40
80
120
160
200
Note 6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics, Per Element
F
0.00001
0.0001
0.001
0.01
0.1
1
10
0
0.3
0.6
0.9
T = -55°C
J
T = 25°C
J
T = 85°C
J
T = 125°C
J
T =150°C
J



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