TSM180P03CS datasheet(2/5 Pages) TSC

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TSM180P03CS

30V P-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications (TJ=25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-30

Drain-Source On-State Resistance

VGS = -10V, ID = -8A

RDS(ON)

VGS = -4.5V, ID = -6A

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1.2

-1.6

-2.5

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V

IDSS

-1

µA

VDS = -24V, TJ = 125ºC

-10

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Forward Transconductance

(Note 2)

VDS = -10V, ID = -8A

gfs

10.5

Dynamic

Total Gate Charge

(Note 2,3)

VDS = -15V, ID = -8A,

VGS = -4.5V

14.6

Gate-Source Charge

(Note 2,3)

Qgs

4.1

Gate-Drain Charge

(Note 2,3)

Qgd

6.3

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Ciss

1730

Output Capacitance

Coss

180

Reverse Transfer Capacitance

Crss

125

Switching

Turn-On Delay Time

(Note 2,3)

VDD = -15V, ID = -1A,

VGS = -10V, RGEN =6Ω

td(on)

Turn-On Rise Time

(Note 2,3)

21.8

Turn-Off Delay Time

(Note 2,3)

td(off)

59.8

Turn-Off Fall Time

(Note 2,3)

14.4

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

-10

Maximum Pulse Drain-Source Diode

Forward Current

ISM

-40

Diode-Source Forward Voltage

VGS = 0V, IS = -1A

VSD

-1

Note:

Pulse width limited by safe operating area

Pulse test: pulse width

≤300µs, duty cycle ≤2%

Switching time is essentially independent of operating temperature.

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