TSM650P02CX datasheet(2/5 Pages) TSC

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TSM650P02CX

20V P-Channel Power MOSFET

2/5

Version: A14

Electrical Specifications (T

C = 25°C unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250µA

BVDSS

-20

Drain-Source On-State Resistance

VGS = -4.5V, ID = -3A

RDS(on)

VGS = -2.5V, ID = -2A

VGS = -1.8V, ID = -1.5A

105

130

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-0.4

-0.6

-0.8

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V

IDSS

-1

µA

VDS = -16V, TJ = 125°C

-10

Gate Body Leakage

VGS = ±10V, VDS = 0V

IGSS

±100

Forward Transconductance

(Note 2)

VDS = -10V, ID = -3A

gfs

5.5

Dynamic

Total Gate Charge

(Note 2,3)

VDS = -10V, ID = -3A,

VGS = -4.5V

6.4

Gate-Source Charge

(Note 2,3)

Qgs

0.9

Gate-Drain Charge

(Note 2,3)

Qgd

1.6

Input Capacitance

VDS = -10V, VGS = 0V,

f = 1.0MHz

Ciss

515

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

(Note 2,3)

VDD = -10V, ID = -1A,

VGS = -4.5V, RGEN = 25Ω

td(on)

Turn-On Rise Time

(Note 2,3)

17.4

Turn-Off Delay Time

(Note 2,3)

td(off)

40.7

Turn-Off Fall Time

(Note 2,3)

11.4

Source-Drain Diode Ratings and Characteristic

Maximum Continuous Drain-Source

Diode Forward Current

Integral reverse diode in

the MOSFET

-4.1

Maximum Pulse Drain-Source Diode

Forward Current

ISM

-16.4

Diode-Source Forward Voltage

VGS = 0V, IS = -1A

VSD

-1

Note:

Pulse width limited by safe operating area

Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%

Switching time is essentially independent of operating temperature.

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