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SDF07N65 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza SDF07N65
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  11 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDF07N65 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Dec,24,2013
2
Ver 3.0
4 Symbol
Min
Typ
Max
Units
BVDSS
650
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
5.5
S
VSD
CISS
1025
pF
COSS
110
pF
CRSS
13
pF
Qg
40
nC
21
nC
Qgs
53
nC
Qgd
23
tD(ON)
ns
tr
3.6
ns
tD(OFF)
8
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=325V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=3.5A
VDS=20V , ID=3.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
1.4
b
f=1.0MHz
b
VDS=325V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
1.4
V
21
1.2
0.78
3
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 100V.(See Figure12)
SDP07N65
SDF07N65



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